High resistivity wafer with heat dissipation structure and method of making the same

ABSTRACT

A high resistivity wafer with a heat dissipation structure includes a high resistivity wafer and a metal structure. The high resistivity wafer includes a heat dissipation region and a device support region. The high resistivity wafer consists of an insulating material. The metal structure is only embedded within the heat dissipation region of the high resistivity wafer. The metal structure surrounds the device support region.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is a divisional application of and claimspriority to U.S. patent application Ser. No. 16/170,067, filed on Oct.25, 2018, and entitled “HIGH RESISTIVITY WAFER WITH HEAT DISSIPATIONSTRUCTURE AND METHOD OF MAKING THE SAME” the entire contents of whichare incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a method and structure which can help asemiconductor structure dissipate heat, and more particularly, to amethod of using a metal structure or a conductive pad on a wafer back todissipate heat.

2. Description of the Prior Art

Semiconductor-on-insulator (SOI) substrates are widely used assubstrates for radio frequency (RF) devices. For example, field effecttransistors are employed as a switching device for RF signals in analogand RF applications. The RF devices on the RF SOI substrate aregenerally applied to wireless communication, mobile phones, etc. SOIsubstrates are typically employed for such applications since parasiticcoupling between devices through the substrate is reduced due to the lowdielectric constant of a buried insulator layer.

An SOI substrate includes an insulator layer on a silicon substrate anda semiconductor material layer on the insulator layer. In an RF circuit,the silicon layer allows active components to be wired together usingany standard IC technology. With the advent of 5G cellular mobilecommunication, the resistivity of a traditional SOI substrate is nothigh enough for RF devices. Therefore, finding a way to increase theresistivity of the substrate of an RF circuit is a main objective in thesemiconductor field. When the resistivity of the substrate becomeshigher, however, the temperature of the substrate becomes too high anddeteriorates the efficiency of the RF devices.

SUMMARY OF THE INVENTION

To solve the above-mentioned problem, the present invention provides anovel heat dissipation structure.

According to a preferred embodiment of the present invention, a highresistivity wafer with a heat dissipation structure includes a highresistivity wafer comprising a heat dissipation region and a devicesupport region, wherein the high resistivity wafer consists of aninsulating material and a metal structure embedded only within the heatdissipation region of the high resistivity wafer, wherein the metalstructure surrounds the device support region.

According to another preferred embodiment of the present invention, asemiconductor structure using a conductive pad on a wafer back todissipate heat includes a device wafer comprising a front side and aback side. A transistor is disposed at the front side, wherein thetransistor comprises at least one gate structure, a source and a drain.At least one heat dissipation structure is disposed at the back side,wherein the heat dissipation structure includes a source conductive padoverlapping the source and electrically connecting to the source. A highresistivity wafer bonds to the device wafer, wherein the highresistivity wafer consists of an insulating material.

A fabricating method of a semiconductor structure with a heatdissipation structure includes providing a device wafer and a highresistivity wafer, wherein the high resistivity wafer consists of aninsulating material, the device wafer comprises a device region and anedge region, a semiconductor device is disposed within the deviceregion, the high resistivity wafer comprises a heat dissipation regionand a device support region, and the heat dissipation region surroundsthe device region. Next, a metal structure is formed in the highresistivity wafer, wherein the metal structure is embedded only in theheat dissipation region. After forming the metal structure, a bondingprocess is performed to bond the device wafer and the high resistivitywafer, making the device region entirely overlap the device supportregion.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 to FIG. 13 depict a fabricating method of a semiconductorstructure with a heat dissipation structure according to a preferredembodiment of the present invention, wherein:

FIG. 1 depicts a sectional view of a device wafer and a high resistivitywafer;

FIG. 2 depicts a top view of a device wafer and a high resistivity wafershown in FIG. 1 ;

FIG. 3 depicts a fabricating stage subsequent to FIG. 1 ;

FIG. 4 depicts a top view of FIG. 3 according to an example of thepresent invention.

FIG. 5 depicts a top view of FIG. 3 according to another example of thepresent invention.

FIG. 6 depicts a fabricating method of a metal structure shown in FIG. 3;

FIG. 7 depicts a modification of FIG. 3 ;

FIG. 8 depicts a top view of FIG. 7 according to an example of thepresent invention;

FIG. 9 depicts a top view of FIG. 7 according to another example of thepresent invention.

FIG. 10 depicts a top view of FIG. 7 according to another example of thepresent invention.

FIG. 11 depicts a top view of FIG. 7 according to another example of thepresent invention.

FIG. 12 depicts a fabricating stage subsequent to FIG. 3 ; and

FIG. 13 depicts a fabricating stage subsequent to FIG. 12 .

FIG. 14 depicts a semiconductor structure with a heat dissipationstructure according to another preferred embodiment of the presentinvention.

FIG. 15 to FIG. 16 depict a fabricating method of a semiconductorstructure using a conductive pad on a wafer back to dissipate heataccording to another preferred embodiment of the present invention,wherein:

FIG. 15 depicts a semiconductor structure using a conductive pad on awafer back to dissipate heat according to another preferred embodimentof the present invention; and

FIG. 16 depicts a fabricating stage subsequent to FIG. 15 .

DETAILED DESCRIPTION

FIG. 1 to FIG. 13 depict a fabricating method of a semiconductorstructure with a heat dissipation structure according to a preferredembodiment of the present invention. FIG. 2 depicts a top view of adevice wafer and a high resistivity wafer in FIG. 1 . FIGS. 4-5 depict atop view of FIG. 3 according to numerous examples. FIGS. 8-11 depict atop view of FIG. 7 according to numerous examples. FIG. 14 depicts asemiconductor structure with a heat dissipation structure according toanother preferred embodiment of the present invention, wherein elementsin FIG. 14 which are substantially the same as those in the embodimentof FIG. 1 to FIG. 13 are denoted by the same reference numerals; anaccompanying explanation is therefore omitted. FIG. 15 to FIG. 16 depicta fabricating method of a semiconductor structure using a conductive padon a wafer back to dissipate heat according to another preferredembodiment of the present invention, wherein elements in FIG. 15 andFIG. 16 which are substantially the same as those in the embodiment ofFIG. 1 to FIG. 13 are denoted by the same reference numerals; anaccompanying explanation is therefore omitted.

As shown in FIG. 1 and FIG. 2 , a device wafer 10 and a high resistivitywafer 12 are provided. The device wafer 10 includes a device region 14and an edge region 16. The edge region 16 surrounds the device region14. The high resistivity wafer 12 includes a device support region 18and a heat dissipation region 20. The heat dissipation region 20surrounds the device support region 18. After a bonding process which isperformed afterwards, the device region 14 will entirely overlap thedevice support region 18, and the heat dissipation region 20 willoverlap the edge region 16.

The device wafer 10 includes a conductive silicon layer 22, a siliconoxide layer 24 and a silicon substrate 26. The silicon oxide layer 24 isdisposed between the conductive silicon layer 22 and the siliconsubstrate 26. Moreover, the device wafer 10 includes a first front side28 and a first back side 30. A semiconductor device such as a transistor31 is disposed at the device region 14 on the first front side 28. Thetransistor 31 includes a gate structure 32 and two source/drain dopingregions 34 a/34 b. The source/drain doping regions 34 a/34 b arerespectively disposed in the conductive silicon layer 22 at two sides ofthe gate structure 32. A shallow trench isolation 36 is disposed aroundthe transistor 31 and in the conductive silicon layer 22. Furthermore,no semiconductor device is disposed within the edge region 16. Aninterlayer dielectric 38 covers and contacts the first front side 28 ofthe device wafer 10. A metal connection 40 is disposed within theinterlayer dielectric 38. The metal connection 40 is formed by numerousmetal layers such as metal layers 40 a/40 b. Conductive plugs 42 a/42 bare respectively disposed on the source/drain doping regions 34 a/34 b.The conductive plug 42 a contacts the metal layer 40 a, and theconductive plug 42 b contacts the metal layer 40 b.

The high resistivity wafer 12 includes a second front side 44 and asecond back side 46. The second front side 44 is opposed to the secondback side 46. The high resistivity wafer 12 consists of an insulatingmaterial. In other words, the high resistivity wafer 12 only includesthe aforesaid insulating material. According to a preferred embodimentof the present invention, the insulating material includes glass,quartz, silicon nitride or other insulating materials. The resistivityof the high resistivity wafer 12 is preferably higher than 10⁹ Ωm, i.e.the resistivity of the insulating material should be greater than 10⁹Ωm. Moreover, the coefficient of thermal expansion of the insulatingmaterial is close to the coefficient of the thermal expansion ofsilicon. Conventionally, the wafer used in the semiconductor field has aresistivity between 30 and 200 Ωm, i.e. the conventional wafer has aresistivity smaller than 200 Ωm. The high resistivity wafer 12 has aresistivity which is much greater than a conventional wafer. Therefore,the high resistivity wafer 12 is defined as high resistive.

As shown in FIG. 3 , a metal structure 48 is formed to be embedded inthe high resistivity wafer 12. The metal structure 48 is only disposedin the heat dissipation region 20. The metal structure 48 may include aclosed metal ring or a ring structure formed by numerous metal pieces.As shown in in FIG. 4 , the metal structure 48 includes a closed metalring 50 a surrounding the device support region 18. As shown in FIG. 5 ,the metal structure 48 includes a ring structure 54 a formed by numerousmetal pieces 52. The ring structure 54 a surrounds the device supportregion 18.

As shown in FIG. 6 , the fabricating method of the metal structure 48including the closed metal ring 50 a and the metal pieces 52 may includeforming a trench 56 in the heat dissipation region 20 on the secondfront side 44 of the high resistivity wafer 12, so that the opening ofthe trench 56 faces the second front side 44. Next, an adhesion layer 58is formed to cover the trench 56 and the second front side 44 of thehigh resistivity wafer 12. Later, a metal layer 60 is formed to fill inthe trench 56 and cover the second front side 44 of the high resistivitywafer 12. Referring to FIG. 3 again, a planarization process isperformed to remove part of the adhesion layer 58 and part of the metallayer 60 to align a top surface of the adhesion layer 58 in the trench,a top surface of the metal layer 60 and the second front side 44 of thehigh resistivity wafer 12. The metal structure 48 includes copper,aluminum or tungsten. The adhesion layer 58 includes tantalum nitride,titanium nitride or molybdenum nitride.

According to a preferred embodiment of the present invention, the metalstructure 48 may include numerous closed metal rings or numerous ringstructures formed by numerous metal pieces. Moreover, the metalstructure 48 can also be formed by numerous closed metal rings andnumerous ring structures. The fabricating method of the metal structure48, the metal rings and the ring structures are the same as thosedisclosed in FIG. 6 , and therefore are omitted here. As shown in FIG. 7and in FIG. 8 , the metal structure 48 can be formed by two closed metalrings 50 a/50 b. The closed metal rings 50 a/50 b together surround thedevice support region 18. As shown in FIG. 7 and in FIG. 9 , the metalstructure 48 is formed by a closed metal ring 50 a surrounding a ringstructure 54 a formed by numerous metal pieces 52. The closed metal ring50 a and the ring structure 54 a together surround the device supportregion 18. As shown in FIG. 7 and in FIG. 10 , the metal structure 48 isformed by two ring structures 54 a/54 b respectively including numerousmetal pieces 52. The two ring structures 54 a/54 b together surround thedevice support region 18. As shown in FIG. 7 and in FIG. 11 , the metalstructure 48 can be formed by a ring structure 54 a surrounding a closedmetal ring 50 a. The ring structure 54 a includes numerous metal pieces52. The ring structure 54 a and the closed metal ring 50 a togethersurround the device support region 18. Although the total numbers of theclosed metal ring and the ring structures are one or two in thisembodiment, they are not limited to this number. The total number can bealtered based on different requirements. Moreover, according to anotherpreferred embodiment of the present invention, the depth of closed metalrings 50 a/50 b or the depth of the ring structures 54 a/54 b which arenearer the device support region 18 is deeper than the depth of closedmetal rings 50 a/50 b or the depth of the ring structures 54 a/54 bwhich are further from the device support region 18. Furthermore,according to another preferred embodiment of the present invention, whenthe total number of the closed metal ring and the ring structures arenot fewer than two, there can be metal traces arranged in a radial-likeddisposition between the closed metal ring 50 a/50 b or the ringstructures 54 a/54 b to connect the inner metal ring/ring structure tothe outer metal ring/ring structure.

As shown in FIG. 12 , after forming the metal structure 48, a bondingprocess is performed to bond the device wafer 10 and the highresistivity wafer 12. After the bonding process, the device region 14and the device support region 18 are entirely overlapped, and the heatdissipation region 20 overlaps the edge region 16. According to apreferred embodiment of the present invention, the heat dissipationregion 20 entirely overlaps the edge region 16. The bonding processincludes forming a dielectric layer 62 which contacts and encapsulatesthe high resistivity wafer 12. The dielectric layer 62 is preferablyformed by silicon oxide. Next, the dielectric layer 62 on the secondfront side 44 and the interlayer dielectric 38 on the first front side28 are bonded together. After the bonding process, the silicon substrate26 is entirely removed by taking the silicon oxide layer 24 as a stoplayer. The back side of the silicon oxide layer 24 serves as the firstback side 30 of the device wafer 10. At this point, a high resistivitywafer with a heat dissipation structure 100 of the present invention iscompleted.

As shown in FIG. 13 , after forming the high resistivity wafer with aheat dissipation structure 100, a conductive bump formation process canbe performed. The conductive bump formation process may include formingat least one conductive pad such as two conductive pads 64 a/64 b shownin FIG. 13 on the back side of the silicon oxide layer 24. The back sideof the silicon oxide layer 24 is the same as the first back side 30 ofthe device wafer 10. Each of the conductive pads 64 a/64 b respectivelyelectrically connects to the metal interconnection 40 in the interlayerdielectric layer 38 through via plugs 66 a/66 b. The metal layer 40 acontacts the conductive pad 42 a and the metal layer 40 b contacts theconductive pad 42 b; therefore, the conductive pads 64 a/64 belectrically connect to the source/drain doping regions 34 a/34 bthrough the metal connection 40.

Later, a protective layer 68 is formed to cover the conductive pads 64a/64 b. Next, two openings are formed within the protective layer 68 toexpose the conductive pads 64 a/64 b. After that, conductive bumps 70are formed to respectively contact the contact pads 64 a/64 b. Thematerial of the conductive pads 64 a/64 b and the conductive bumps 70may be titanium (Ti), tantalum (Ta), aluminum (Al), tungsten (W) orcopper (Cu), etc.

As shown in FIG. 12 , a high resistivity wafer with a heat dissipationstructure of the present invention includes a high resistivity wafer 12,a device wafer 10 and a metal structure 48. The high resistivity wafer12 includes a heat dissipation region 20 and a device support region 18.The high resistivity wafer 12 consists of an insulating material. Themetal structure 48 is only embedded within the heat dissipation region20 of the high resistivity wafer 12. The metal structure 48 surroundsthe device support region 18. The device wafer 10 covers the highresistivity wafer 12. The device wafer 10 includes a device region 14and an edge region 16. No semiconductor device is disposed within theedge region 16. Furthermore, the device wafer 10 includes a first frontside 28 and a first back side 30. A semiconductor device is disposedwithin the device region 14 on the first front side 28. Thesemiconductor device can be a transistor 31. The transistor 31 includesa gate structure 32 and two source/drain doping regions 34 a/34 b. Thesource/drain doping regions 34 a/34 b are respectively disposed in theconductive silicon layer 22 at two sides of the gate structure 32. Ashallow trench isolation 36 is disposed in the conductive silicon layer22 and surrounds the transistor 31. An interlayer dielectric 38 coversand contacts the first front side 28 of the device wafer 10. A metalconnection 40 is disposed within the interlayer dielectric 38. The highresistivity wafer 12 bonds to the device wafer 10 by bonding theinterlayer dielectric 38 and the dielectric layer 62. The device region14 and the device support region 18 are entirely overlapped, and theheat dissipation region 20 overlaps the edge region 16. According to apreferred embodiment of the present invention, the heat dissipationregion 20 entirely overlaps the edge region 16.

Due to the high resistivity of the high resistivity wafer, theefficiency of the radio frequency device is increased; however, thishigh resistivity may lead to the wafer overheating. Therefore, the metalstructure embedded in the high resistivity wafer is used as a heatdissipation structure. Because metal has good thermal conductivity, theheat accumulated in the high resistivity wafer can be conducted.Furthermore, the metal structure does not overlap the device region;therefore, the property of the semiconductor device is not influenced bythe metal structure.

According to another preferred embodiment of the present invention,after the step performed in FIG. 12 , a step shown in FIG. 14 can beperformed. As shown in FIG. 14 , at least one heat dissipation structure72 such as a source conductive pad 74 a and a drain conductive pad 74 bis formed on the first back side 30 of the device wafer. The sourceconductive pad 74 a electrically connects to the metal layer 40 athrough the via plug 66 a in the interlayer dielectric 38. The drainconductive pad 74 b electrically connects to the metal layer 40 bthrough the via plug 66 b in the interlayer dielectric 38. Because themetal layer 40 a contacts the conductive plug 42 a, and the metal layer40 b contacts the conductive plug 42 b, the source conductive pad 74 aelectrically connects to the source/drain doping region 34 a, and thedrain conductive pad 74 b electrically connects to the source/draindoping region 34 b. The source/drain doping region 34 a serves as asource and the source/drain doping region 34 b serves as a drain duringoperation. It is noteworthy that the source conductive pad 74 a not onlycovers the shallow trench isolation 36 but also extends to overlap thesource/drain doping region 34 a serving as a source. The drainconductive pad 74 b not only covers the shallow trench isolation 36 butalso extends to overlap the source/drain doping region 34 b serving as adrain. Besides, a wafer back gate 76 is formed on the first back side30. The source conductive pad 74 a, the drain conductive pad 74 b andthe wafer back gate 76 may be titanium (Ti), tantalum (Ta), aluminum(Al), tungsten (W) or copper (Cu), etc.

According to another preferred embodiment of the present invention, themetal structure in the high resistivity wafer can be omitted, only thesource conductive pad 74 a and the drain conductive pad 74 b on thefirst back side 30 are formed. The fabricating process of thisembodiment can be performed by the steps illustrated in FIG. 1 to FIG.13 , only omitting the step of forming the metal structure 48 in FIG. 3. As shown in FIG. 15 , a semiconductor structure using a conductive padon a wafer back to dissipate heat 200 of the present invention includesa device wafer 10. The device wafer 10 includes a first front side 28and a first back side 30. A transistor 31 is disposed at the first frontside 28. The transistor 31 includes a gate structure 32 and twosource/drain doping regions 34 a/34 b. The source/drain doping region 34a serves as a source and the source/drain doping region 34 b serves as adrain during operation. A shallow trench isolation 36 is disposed aroundthe transistor 31. At least one heat dissipation structure 72 isdisposed at the first back side 30 of the device wafer 10. The heatdissipation structure 72 includes a source conductive pad 74 a and adrain conductive pad 74 b. The source conductive pad 74 a not onlycovers the shallow trench isolation 36 but also extends to overlap thesource/drain doping region 34 a serving as a source. The drainconductive pad 74 b not only covers the shallow trench isolation 36 butalso extends to overlap the source/drain doping region 34 b serving as adrain.

An interlayer dielectric 38 covers and contacts the first front side ofthe device wafer 10. A metal connection 40 is disposed within theinterlayer dielectric 38. The metal connection 40 is formed by numerousmetal layer such as metal layers 40 a/40 b. Conductive plugs 42 a/42 bare respectively disposed on the source/drain doping region 34 a/34 b.The conductive plug 42 a contacts the metal layer 40 a, and theconductive plug 42 b contacts the metal layer 40 b. The sourceconductive pad 74 a electrically connects to the metal layer 40 athrough the via plug 66 a. The drain conductive pad 74 b electricallyconnects to the metal layer 40 b through the via plug 66 b. The metallayer 40 a contacts the conductive pad 42 a and the metal layer 40 bcontacts the conductive pad 42 b; therefore, the conductive pads 64 aelectrically connect to the source/drain doping regions 34 a serving asa source, and the conductive pads 64 b electrically connect to thesource/drain doping regions 34 b serving as a drain.

A high resistivity wafer 12 is encapsulated by a dielectric layer 62.The high resistivity wafer 12 bonds to the device wafer 10 by bondingthe interlayer dielectric 38 and the dielectric layer 62. The highresistivity wafer 12 consists of an insulating material. The insulatingmaterial includes glass, quartz, silicon nitride or other insulatingmaterials. The resistivity of the high resistivity wafer 12 ispreferably higher than 10⁹ Ωm, i.e. the resistivity of the insulatingmaterial should be greater than 10⁹ Ωm.

The areas of both the source conductive pad and the drain conductive padof the present invention present are increased to respectively overlapthe source and the drain. In this way, the heat formed by the source anddrain can be conducted to the outside through the source conductive padand the drain conductive pad.

As shown in FIG. 16 , based on different requirements, conductive plugs78 a/78 b/78 c and conductive pads 80 a/80 b/80 c can be formed on thesource conductive pad 74 a, the drain conductive pad 74 b and a waferback gate 76. The conductive plugs 78 a/78 b/78 c and the conductivepads 80 a/80 b/80 c help to further conduct the heat on the sourceconductive pad 74 a, the drain conductive pad 74 b and the wafer backgate 76 to the outside.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A fabricating method of a semiconductor structurewith a heat dissipation structure, comprising: providing a device waferand a high resistivity wafer, wherein the high resistivity waferconsists of an insulating material, the device wafer comprises a deviceregion and an edge region, a semiconductor device is disposed within thedevice region, the high resistivity wafer comprises a heat dissipationregion and a device support region, and the heat dissipation regionsurrounds the device region; forming a metal structure in the highresistivity wafer, wherein the metal structure is embedded only in theheat dissipation region; and after forming the metal structure,performing a bonding process to bond the device wafer and the highresistivity wafer, and make the device region entirely overlap thedevice support region.
 2. The fabricating method of a semiconductorstructure with a heat dissipation structure of claim 1, wherein thesteps of forming the metal structure comprises: forming a trench withinthe heat dissipation region of the high resistivity wafer; forming anadhesion layer covering the trench and a front side of the highresistivity wafer; forming a metal layer filling in the trench andcovering the front side of the high resistivity wafer; and performing aplanarization process to remove part of the adhesion layer and part ofthe metal layer and align a top surface of the adhesion layer in thetrench, a top surface of the metal layer and the front side of the highresistivity wafer.
 3. The fabricating method of a semiconductorstructure with a heat dissipation structure of claim 1, wherein themetal structure comprises copper, aluminum or tungsten.
 4. Thefabricating method of a semiconductor structure with a heat dissipationstructure of claim 1, wherein the insulating layer comprises glass,quartz or silicon nitride.
 5. The fabricating method of a semiconductorstructure with a heat dissipation structure of claim 1, wherein nosemiconductor device is within the edge region.